PMPB100XPEA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMPB100XPEA

Código: 3R

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1.25 V

Qgⓘ - Carga de la puerta: 3.3 nC

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.122 Ohm

Encapsulados: SOT1220

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PMPB100XPEA datasheet

 ..1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB100XPEA

PMPB100XPEA 20 V, P-channel Trench MOSFET 13 November 2019 Product data sheet 1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 7.1. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB100XPEA

PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

 8.1. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB100XPEA

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

 8.2. Size:314K  nxp
 pmpb10up.pdf pdf_icon

PMPB100XPEA

PMPB10UP 12 V, P-channel Trench MOSFET 24 January 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

MOSTRAR MÁS

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