Справочник MOSFET. PMPB100XPEA

 

PMPB100XPEA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMPB100XPEA
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 56 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.122 Ohm
   Тип корпуса: SOT1220
 

 Аналог (замена) для PMPB100XPEA

   - подбор ⓘ MOSFET транзистора по параметрам

 

PMPB100XPEA Datasheet (PDF)

 ..1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB100XPEA

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 7.1. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB100XPEA

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

 8.1. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB100XPEA

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

 8.2. Size:314K  nxp
 pmpb10up.pdf pdf_icon

PMPB100XPEA

PMPB10UP12 V, P-channel Trench MOSFET24 January 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PMN48XPA , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , BS170 , PMPB10EN , PMPB10UP , PMPB10XNEA , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP .

History: AOTF600A70L | FMV19N60ES | PHK12NQ03LT | NX3020NAKS | AFP1073 | HGP098N10AL | KI1555DL

 

 
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