PMPB100XPEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB100XPEA
Marking Code: 3R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 3.3 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 56 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.122 Ohm
Package: SOT1220
PMPB100XPEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB100XPEA Datasheet (PDF)
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