PMPB10UP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PMPB10UP
   Código: 6G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 509 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: SOT1220

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PMPB10UP Datasheet (PDF)

..1. Size:314K nxp
pmpb10up.pdf

PMPB10UP12 V, P-channel Trench MOSFET24 January 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

8.1. Size:321K nxp
pmpb100xpea.pdf

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

8.2. Size:316K nxp
pmpb100ene.pdf

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

8.3. Size:247K nxp
pmpb10xne.pdf

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

8.4. Size:294K nxp
pmpb10xnea.pdf

PMPB10XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

8.5. Size:340K nxp
pmpb10en.pdf

PMPB10EN30 V, N-channel MOSFET10 July 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology

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