PMPB10UP Specs and Replacement

Type Designator: PMPB10UP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 509 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SOT1220

PMPB10UP substitution

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PMPB10UP datasheet

 ..1. Size:314K  nxp
 pmpb10up.pdf pdf_icon

PMPB10UP

PMPB10UP 12 V, P-channel Trench MOSFET 24 January 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 8.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB10UP

PMPB100XPEA 20 V, P-channel Trench MOSFET 13 November 2019 Product data sheet 1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S... See More ⇒

 8.2. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB10UP

PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic ... See More ⇒

 8.3. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB10UP

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult... See More ⇒

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Detailed specifications: PMN52XP, PMN55ENE, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, PMPB10EN, IRF3205, PMPB10XNEA, PMPB12UNE, PMPB12UNEA, PMPB13UP, PMPB13XNEA, PMPB14XP, PMPB15XPA, PMPB16EP

Keywords - PMPB10UP MOSFET specs

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 PMPB10UP replacement

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