PMPB20XNEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMPB20XNEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 178 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SOT1220

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PMPB20XNEA datasheet

 ..1. Size:732K  nxp
 pmpb20xnea.pdf pdf_icon

PMPB20XNEA

PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 7.1. Size:295K  nxp
 pmpb20xpea.pdf pdf_icon

PMPB20XNEA

PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 7.2. Size:250K  nxp
 pmpb20xpe.pdf pdf_icon

PMPB20XNEA

PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr

 8.1. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20XNEA

PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t

MOSTRAR MÁS

Otros transistores... PMPB10XNEA, PMPB12UNE, PMPB12UNEA, PMPB13UP, PMPB13XNEA, PMPB14XP, PMPB15XPA, PMPB16EP, IRF640, PMPB20XPEA, PMPB23XNEA, PMPB24EP, PMPB25ENE, PMPB27EPA, PMPB29XNEA, PMPB29XPEA, PMPB30XPE