PMPB20XNEA Specs and Replacement

Type Designator: PMPB20XNEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT1220

PMPB20XNEA substitution

- MOSFET ⓘ Cross-Reference Search

 

PMPB20XNEA datasheet

 ..1. Size:732K  nxp
 pmpb20xnea.pdf pdf_icon

PMPB20XNEA

PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ... See More ⇒

 7.1. Size:295K  nxp
 pmpb20xpea.pdf pdf_icon

PMPB20XNEA

PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 7.2. Size:250K  nxp
 pmpb20xpe.pdf pdf_icon

PMPB20XNEA

PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr... See More ⇒

 8.1. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20XNEA

PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t... See More ⇒

SHOW MORE

Detailed specifications: PMPB10XNEA, PMPB12UNE, PMPB12UNEA, PMPB13UP, PMPB13XNEA, PMPB14XP, PMPB15XPA, PMPB16EP, IRF640, PMPB20XPEA, PMPB23XNEA, PMPB24EP, PMPB25ENE, PMPB27EPA, PMPB29XNEA, PMPB29XPEA, PMPB30XPE

Keywords - PMPB20XNEA MOSFET specs

 PMPB20XNEA cross reference

 PMPB20XNEA equivalent finder

 PMPB20XNEA pdf lookup

 PMPB20XNEA substitution

 PMPB20XNEA replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility