All MOSFET. PMPB20XNEA Datasheet

 

PMPB20XNEA Datasheet and Replacement


   Type Designator: PMPB20XNEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT1220
 

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PMPB20XNEA Datasheet (PDF)

 ..1. Size:732K  nxp
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PMPB20XNEA

PMPB20XNEA20 V, N-channel Trench MOSFET22 February 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 7.1. Size:295K  nxp
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PMPB20XNEA

PMPB20XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 7.2. Size:250K  nxp
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PMPB20XNEA

PMPB20XPE20 V, single P-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr

 8.1. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20XNEA

PMPB20EN30 V N-channel Trench MOSFET14 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t

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Datasheet: PMPB10XNEA , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP , PMPB15XPA , PMPB16EP , IRFP460 , PMPB20XPEA , PMPB23XNEA , PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA , PMPB29XPEA , PMPB30XPE .

History: AON6405 | QM12N65B | SSM3J36MFV | SPB12N50C3 | HUFA76429D3ST | HGP190N15S | 2SK1642

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