PMPB29XNEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMPB29XNEA
Código: 4H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 VQgⓘ - Carga de la puerta: 12.4 nC
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Paquete / Cubierta: SOT1220
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PMPB29XNEA Datasheet (PDF)
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