PMPB29XNEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB29XNEA
Marking Code: 4H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.4 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT1220
PMPB29XNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB29XNEA Datasheet (PDF)
pmpb29xnea.pdf
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