PMT200EPE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMT200EPE  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 47 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.167 Ohm

Encapsulados: SOT223

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PMT200EPE datasheet

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 pmt200epe.pdf pdf_icon

PMT200EPE

PMT200EPE 70 V, P-channel Trench MOSFET 14 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D

 7.1. Size:213K  nxp
 pmt200en.pdf pdf_icon

PMT200EPE

PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo

 9.1. Size:225K  prisemi
 ppmt20v4e.pdf pdf_icon

PMT200EPE

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 -20 0.037 @ V =-4.5V -4 GS S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20V DS Gate-Source Voltage V 10 V GS Drain Current Contin

 9.2. Size:109K  prisemi
 ppmt20v3.pdf pdf_icon

PMT200EPE

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTE

MOSTRAR MÁS

Otros transistores... PMPB29XPEA, PMPB30XPE, PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, PMPB8XN, 7N65, PMT280ENEA, PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA