PMT200EPE Datasheet. Specs and Replacement

Type Designator: PMT200EPE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.167 Ohm

Package: SOT223

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PMT200EPE datasheet

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PMT200EPE

PMT200EPE 70 V, P-channel Trench MOSFET 14 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D... See More ⇒

 7.1. Size:213K  nxp
 pmt200en.pdf pdf_icon

PMT200EPE

PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo... See More ⇒

 9.1. Size:225K  prisemi
 ppmt20v4e.pdf pdf_icon

PMT200EPE

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 -20 0.037 @ V =-4.5V -4 GS S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20V DS Gate-Source Voltage V 10 V GS Drain Current Contin... See More ⇒

 9.2. Size:109K  prisemi
 ppmt20v3.pdf pdf_icon

PMT200EPE

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTE... See More ⇒

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Detailed specifications: PMPB29XPEA, PMPB30XPE, PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, PMPB8XN, 7N65, PMT280ENEA, PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA

Keywords - PMT200EPE MOSFET specs

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