PMT200EPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMT200EPE
Marking Code: T2EPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.6 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.167 Ohm
Package: SOT223
PMT200EPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMT200EPE Datasheet (PDF)
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