All MOSFET. PMT200EPE Datasheet

 

PMT200EPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMT200EPE
   Marking Code: T2EPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.6 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.167 Ohm
   Package: SOT223

 PMT200EPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMT200EPE Datasheet (PDF)

 ..1. Size:286K  nxp
 pmt200epe.pdf

PMT200EPE PMT200EPE

PMT200EPE70 V, P-channel Trench MOSFET14 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D

 7.1. Size:213K  nxp
 pmt200en.pdf

PMT200EPE PMT200EPE

PMT200EN100 V N-channel Trench MOSFET25 October 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo

 9.1. Size:225K  prisemi
 ppmt20v4e.pdf

PMT200EPE PMT200EPE

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG1-20 0.037 @ V =-4.5V -4 GSS2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20VDSGate-Source Voltage V 10 V GSDrain Current Contin

 9.2. Size:109K  prisemi
 ppmt20v3.pdf

PMT200EPE PMT200EPE

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTE

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