PMV164ENEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV164ENEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.64 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.218 Ohm

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de PMV164ENEA MOSFET

- Selecciónⓘ de transistores por parámetros

 

PMV164ENEA datasheet

 ..1. Size:270K  nxp
 pmv164enea.pdf pdf_icon

PMV164ENEA

PMV164ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.1. Size:255K  nxp
 pmv16xn.pdf pdf_icon

PMV164ENEA

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss

 9.2. Size:1631K  nxp
 pmv160up.pdf pdf_icon

PMV164ENEA

PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast

 9.3. Size:348K  tysemi
 pmv160up.pdf pdf_icon

PMV164ENEA

Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec

MOSTRAR MÁS

Otros transistores... PMPB8XN, PMT200EPE, PMT280ENEA, PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, 2N7002, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA