PMV164ENEA Datasheet. Specs and Replacement

Type Designator: PMV164ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.218 Ohm

Package: SOT23

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PMV164ENEA datasheet

 ..1. Size:270K  nxp
pmv164enea.pdf pdf_icon

PMV164ENEA

PMV164ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

 9.1. Size:255K  nxp
pmv16xn.pdf pdf_icon

PMV164ENEA

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss... See More ⇒

 9.2. Size:1631K  nxp
pmv160up.pdf pdf_icon

PMV164ENEA

PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast ... See More ⇒

 9.3. Size:348K  tysemi
pmv160up.pdf pdf_icon

PMV164ENEA

Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec... See More ⇒

Detailed specifications: PMPB8XN, PMT200EPE, PMT280ENEA, PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, 2N7002, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.