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PMV164ENEA Spec and Replacement


   Type Designator: PMV164ENEA
   Marking Code: HU*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 2.5 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.218 Ohm
   Package: SOT23

 PMV164ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV164ENEA Specs

 ..1. Size:270K  nxp
 pmv164enea.pdf pdf_icon

PMV164ENEA

PMV164ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

 9.1. Size:255K  nxp
 pmv16xn.pdf pdf_icon

PMV164ENEA

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss... See More ⇒

 9.2. Size:1631K  nxp
 pmv160up.pdf pdf_icon

PMV164ENEA

PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast ... See More ⇒

 9.3. Size:348K  tysemi
 pmv160up.pdf pdf_icon

PMV164ENEA

Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec... See More ⇒

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Detailed specifications: PMPB8XN , PMT200EPE , PMT280ENEA , PMT560ENEA , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , 2N7002 , PMV19XNEA , PMV20XNEA , PMV230ENEA , PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA .

History: HGK220N25S

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