Справочник MOSFET. PMV164ENEA

 

PMV164ENEA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMV164ENEA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.64 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 16 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.218 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для PMV164ENEA

 

 

PMV164ENEA Datasheet (PDF)

 ..1. Size:270K  nxp
 pmv164enea.pdf

PMV164ENEA PMV164ENEA

PMV164ENEA60 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.1. Size:255K  nxp
 pmv16xn.pdf

PMV164ENEA PMV164ENEA

PMV16XN20 V, N-channel Trench MOSFET11 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss

 9.2. Size:1631K  nxp
 pmv160up.pdf

PMV164ENEA PMV164ENEA

PMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast

 9.3. Size:348K  tysemi
 pmv160up.pdf

PMV164ENEA PMV164ENEA

Product specificationPMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec

 9.4. Size:362K  tysemi
 pmv16un.pdf

PMV164ENEA PMV164ENEA

Product specificationPMV16UN20 V, 5.8 A N-channel Trench MOSFETRev. 1 4 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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