PMV30ENEA Todos los transistores

 

PMV30ENEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV30ENEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de PMV30ENEA MOSFET

   - Selección ⓘ de transistores por parámetros

 

PMV30ENEA Datasheet (PDF)

 ..1. Size:254K  nxp
 pmv30enea.pdf pdf_icon

PMV30ENEA

PMV30ENEA40 V N-channel Trench MOSFET2 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.1. Size:238K  philips
 pmv30un.pdf pdf_icon

PMV30ENEA

PMV30UNTrenchMOS ultra low level FETRev. 01 25 June 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV30UN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High-speed switches.1.4 Qui

 9.2. Size:716K  nxp
 pmv30xpea.pdf pdf_icon

PMV30ENEA

PMV30XPEA20 V, P-channel Trench MOSFET30 October 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot =

 9.3. Size:265K  nxp
 pmv30un2.pdf pdf_icon

PMV30ENEA

PMV30UN220 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

MOSTRAR MÁS

Otros transistores... PMV19XNEA , PMV20XNEA , PMV230ENEA , PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , IRF9540N , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA .

 

 
Back to Top

 


 
.