PMV30ENEA - Даташиты. Аналоги. Основные параметры

PMV30ENEA 40 V N-channel Trench MOSFET 2 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

PMV30UN TrenchMOS ultra low level FET Rev. 01 25 June 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV30UN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High-speed switches. 1.4 Qui

PMV30XPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot =

PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

PMV30XPA 20 V, P-channel Trench MOSFET 28 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology Ve

Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET t

Product specification PMV30UN TrenchMOS ultra low level FET Rev. 01 25 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV30UN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High-speed swi