PMV30ENEA Datasheet. Specs and Replacement

Type Designator: PMV30ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

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PMV30ENEA datasheet

 ..1. Size:254K  nxp
pmv30enea.pdf pdf_icon

PMV30ENEA

PMV30ENEA 40 V N-channel Trench MOSFET 2 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

 9.1. Size:238K  philips
pmv30un.pdf pdf_icon

PMV30ENEA

PMV30UN TrenchMOS ultra low level FET Rev. 01 25 June 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV30UN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High-speed switches. 1.4 Qui... See More ⇒

 9.2. Size:716K  nxp
pmv30xpea.pdf pdf_icon

PMV30ENEA

PMV30XPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot =... See More ⇒

 9.3. Size:265K  nxp
pmv30un2.pdf pdf_icon

PMV30ENEA

PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip... See More ⇒

Detailed specifications: PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA, SKD502T, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, PMV450ENEA, PMV48XPA2, PMV52ENEA

Keywords - PMV30ENEA MOSFET specs

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