PMV450ENEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV450ENEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.323 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: SOT23

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PMV450ENEA datasheet

 ..1. Size:727K  nxp
 pmv450enea.pdf pdf_icon

PMV450ENEA

PMV450ENEA 60 V, N-channel Trench MOSFET 23 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

 9.1. Size:238K  philips
 pmv45en.pdf pdf_icon

PMV450ENEA

PMV45EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV45EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High speed switch. 1

 9.2. Size:463K  nxp
 pmv45en2.pdf pdf_icon

PMV450ENEA

PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

 9.3. Size:204K  tysemi
 pmv45en.pdf pdf_icon

PMV450ENEA

Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

MOSTRAR MÁS

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