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PMV450ENEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV450ENEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.323 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: SOT23
 

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PMV450ENEA Datasheet (PDF)

 ..1. Size:727K  nxp
 pmv450enea.pdf pdf_icon

PMV450ENEA

PMV450ENEA60 V, N-channel Trench MOSFET23 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

 9.1. Size:238K  philips
 pmv45en.pdf pdf_icon

PMV450ENEA

PMV45ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV45EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1

 9.2. Size:463K  nxp
 pmv45en2.pdf pdf_icon

PMV450ENEA

PMV45EN230 V, N-channel Trench MOSFET3 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

 9.3. Size:204K  tysemi
 pmv45en.pdf pdf_icon

PMV450ENEA

Product specificationPMV45ENN-channel TrenchMOS logic level FETRev. 2 7 November 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

MOSTRAR MÁS

Otros transistores... PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , IRF530 , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE .

 

 
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