PMV450ENEA Datasheet. Specs and Replacement

Type Designator: PMV450ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.323 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT23

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PMV450ENEA datasheet

 ..1. Size:727K  nxp
pmv450enea.pdf pdf_icon

PMV450ENEA

PMV450ENEA 60 V, N-channel Trench MOSFET 23 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc... See More ⇒

 9.1. Size:238K  philips
pmv45en.pdf pdf_icon

PMV450ENEA

PMV45EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV45EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High speed switch. 1... See More ⇒

 9.2. Size:463K  nxp
pmv45en2.pdf pdf_icon

PMV450ENEA

PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa... See More ⇒

 9.3. Size:204K  tysemi
pmv45en.pdf pdf_icon

PMV450ENEA

Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.... See More ⇒

Detailed specifications: PMV28ENEA, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, IRF1010E, PMV48XPA2, PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, PMV90ENE

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