PSMN011-100YSF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN011-100YSF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 152 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 79.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.1 nS

Cossⓘ - Capacitancia de salida: 395 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0109 Ohm

Encapsulados: SOT669

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PSMN011-100YSF datasheet

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 psmn011-100ysf.pdf pdf_icon

PSMN011-100YSF

PSMN011-100YSF NextPower 100V, 10.9 m N-channel MOSFET in LFPAK56 package 18 March 2019 Product data sheet 1. General description NextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 6.1. Size:219K  philips
 psmn011-80ys.pdf pdf_icon

PSMN011-100YSF

PSMN011-80YS N-channel LFPAK 80 V 11 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 6.2. Size:338K  nxp
 psmn011-60ml.pdf pdf_icon

PSMN011-100YSF

PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction loss

 6.3. Size:342K  nxp
 psmn011-60ms.pdf pdf_icon

PSMN011-100YSF

PSMN011-60MS N-channel 60 V 11.3 m standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conductio

MOSTRAR MÁS

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