PSMN011-100YSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN011-100YSF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 152 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 79.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.1 nS
Cossⓘ - Capacitancia de salida: 395 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0109 Ohm
Paquete / Cubierta: SOT669
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PSMN011-100YSF Datasheet (PDF)
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Otros transistores... PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , P0903BDG , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL .
History: UT120N03 | SWP068R08ET | AM7304N | NCEP6060GU | UPA1932TE | UTT40P04 | SPP15N65C3
History: UT120N03 | SWP068R08ET | AM7304N | NCEP6060GU | UPA1932TE | UTT40P04 | SPP15N65C3



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