PSMN011-100YSF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN011-100YSF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 152 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 79.5 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 12.1 ns
Cossⓘ - Выходная емкость: 395 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0109 Ohm
Тип корпуса: SOT669
- подбор MOSFET транзистора по параметрам
PSMN011-100YSF Datasheet (PDF)
psmn011-100ysf.pdf

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psmn011-60ms.pdf

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