PSMN011-100YSF datasheet, аналоги, основные параметры
Наименование производителя: PSMN011-100YSF 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 152 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 79.5 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12.1 ns
Cossⓘ - Выходная емкость: 395 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0109 Ohm
Тип корпуса: SOT669
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Аналог (замена) для PSMN011-100YSF
- подборⓘ MOSFET транзистора по параметрам
PSMN011-100YSF даташит
psmn011-100ysf.pdf
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psmn011-80ys.pdf
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psmn011-60ml.pdf
PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction loss
psmn011-60ms.pdf
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Другие IGBT... PMV74EPE, PMV88ENEA, PMV90ENE, PMZ600UNEL, PMZ950UPEL, PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, IRF1407, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL, PSMN015-100YL, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL
History: E20N50 | AP10N6R0S | SI6404DQ | TSM3400CX | AP10N4R5S | IRF9388PBF | IXTT75N10L2
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