All MOSFET. PSMN011-100YSF Datasheet

 

PSMN011-100YSF Datasheet and Replacement


   Type Designator: PSMN011-100YSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 152 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 79.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12.1 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
   Package: SOT669
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PSMN011-100YSF Datasheet (PDF)

 ..1. Size:317K  nxp
psmn011-100ysf.pdf pdf_icon

PSMN011-100YSF

PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 6.1. Size:219K  philips
psmn011-80ys.pdf pdf_icon

PSMN011-100YSF

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 6.2. Size:338K  nxp
psmn011-60ml.pdf pdf_icon

PSMN011-100YSF

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss

 6.3. Size:342K  nxp
psmn011-60ms.pdf pdf_icon

PSMN011-100YSF

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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