PSMN011-100YSF MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN011-100YSF
Marking Code: 11FS10Y
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 152 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 79.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 34.3 nC
trⓘ - Rise Time: 12.1 nS
Cossⓘ - Output Capacitance: 395 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
Package: SOT669
PSMN011-100YSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN011-100YSF Datasheet (PDF)
psmn011-100ysf.pdf
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FRS430H
History: FRS430H
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