PSMN019-100YL Todos los transistores

 

PSMN019-100YL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN019-100YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36.8 nS
   Cossⓘ - Capacitancia de salida: 222 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SOT669

 Búsqueda de reemplazo de MOSFET PSMN019-100YL

 

Principales características: PSMN019-100YL

 ..1. Size:743K  nxp
psmn019-100yl.pdf pdf_icon

PSMN019-100YL

PSMN019-100YL N-channel 100 V, 19 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.1. Size:225K  philips
psmn018-80ys.pdf pdf_icon

PSMN019-100YL

PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 8.2. Size:221K  philips
psmn012-80ps.pdf pdf_icon

PSMN019-100YL

PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 8.3. Size:101K  philips
psmn015-100p 100b.pdf pdf_icon

PSMN019-100YL

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-

Otros transistores... PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , 20N50 , PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , PSMN1R0-40SSH , PSMN1R0-40ULD , PSMN1R0-40YSH .

History: JMPC20N60BJ

 

 
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