PSMN019-100YL Datasheet. Specs and Replacement

Type Designator: PSMN019-100YL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.8 nS

Cossⓘ - Output Capacitance: 222 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SOT669

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PSMN019-100YL substitution

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PSMN019-100YL datasheet

 ..1. Size:743K  nxp
psmn019-100yl.pdf pdf_icon

PSMN019-100YL

PSMN019-100YL N-channel 100 V, 19 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon... See More ⇒

 8.1. Size:225K  philips
psmn018-80ys.pdf pdf_icon

PSMN019-100YL

PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO... See More ⇒

 8.2. Size:221K  philips
psmn012-80ps.pdf pdf_icon

PSMN019-100YL

PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low... See More ⇒

 8.3. Size:101K  philips
psmn015-100p 100b.pdf pdf_icon

PSMN019-100YL

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-... See More ⇒

Detailed specifications: PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL, PSMN015-100YL, PSMN018-100ESF, PSMN018-100PSF, 20N50, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, PSMN1R0-25YLD, PSMN1R0-40SSH, PSMN1R0-40ULD, PSMN1R0-40YSH

Keywords - PSMN019-100YL MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs