PSMN019-100YL - аналоги и даташиты транзистора

 

PSMN019-100YL - Даташиты. Аналоги. Основные параметры


   Наименование производителя: PSMN019-100YL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 36.8 ns
   Cossⓘ - Выходная емкость: 222 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: SOT669

 Аналог (замена) для PSMN019-100YL

 

PSMN019-100YL Datasheet (PDF)

 ..1. Size:743K  nxp
psmn019-100yl.pdfpdf_icon

PSMN019-100YL

PSMN019-100YL N-channel 100 V, 19 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.1. Size:225K  philips
psmn018-80ys.pdfpdf_icon

PSMN019-100YL

PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 8.2. Size:221K  philips
psmn012-80ps.pdfpdf_icon

PSMN019-100YL

PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 8.3. Size:101K  philips
psmn015-100p 100b.pdfpdf_icon

PSMN019-100YL

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-

Другие MOSFET... PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , 20N50 , PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , PSMN1R0-40SSH , PSMN1R0-40ULD , PSMN1R0-40YSH .

 

 
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