PSMN1R6-30MLH Todos los transistores

PSMN1R6-30MLH N-channel 30 V, 1.9 m , 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applicat

PSMN1R6-30PL N-channel 30 V 1.7 m logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

PSMN1R6-30PL N-channel 30 V 1.7 m logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

PSMN1R6-30BL N-channel 30 V 1.9 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

isc N-Channel MOSFET Transistor PSMN1R6-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor PSMN1R6-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general