PSMN1R6-30MLH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R6-30MLH
Маркировка: 1H630L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 106 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 41 nC
trⓘ - Время нарастания: 34 ns
Cossⓘ - Выходная емкость: 758 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
Тип корпуса: SOT1210
Аналог (замена) для PSMN1R6-30MLH
PSMN1R6-30MLH Datasheet (PDF)
psmn1r6-30mlh.pdf
PSMN1R6-30MLHN-channel 30 V, 1.9 m, 160 A logic level MOSFET inLFPAK33 using NextPowerS3 technology12 November 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 Aand optimized for DC load switch and hot-swap applicat
psmn1r6-30pl.pdf
PSMN1R6-30PLN-channel 30 V 1.7 m logic level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
psmn1r6-30pl.pdf
PSMN1R6-30PLN-channel 30 V 1.7 m logic level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
psmn1r6-30bl.pdf
PSMN1R6-30BLN-channel 30 V 1.9 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn1r6-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R6-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn1r6-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R6-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918