PSMN1R6-30MLH MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN1R6-30MLH
   Marking Code: 1H630L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 758 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: SOT1210

PSMN1R6-30MLH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS