PSMN2R5-40YLD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN2R5-40YLD
   Código: 2D5L40Y
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 147 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 160 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.05 V
   Carga de la puerta (Qg): 56 nC
   Tiempo de subida (tr): 26 nS
   Conductancia de drenaje-sustrato (Cd): 941 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0026 Ohm
   Paquete / Cubierta: SOT669

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PSMN2R5-40YLD Datasheet (PDF)

..1. Size:304K nxp
psmn2r5-40yld.pdf

PSMN2R5-40YLDN-channel 40 V, 2.6 m, 160 A logic level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 packageusing advanced TrenchMOS Superjunction technology. This product has been designed andqualified for high performance power

6.1. Size:390K philips
psmn2r5-30yl.pdf

PSMN2R5-30YLN-channel 30 V 2.4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benef

6.2. Size:253K nxp
psmn2r5-60pl.pdf

PSMN2R5-60PLN-channel 60 V, 2.6 m logic level MOSFET in SOT7827 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi

6.3. Size:980K nxp
psmn2r5-30yl.pdf

6.4. Size:261K inchange semiconductor
psmn2r5-60pl.pdf

isc N-Channel MOSFET Transistor PSMN2R5-60PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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