PSMN2R5-40YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN2R5-40YLD
Маркировка: 2D5L40Y
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 147 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.05 V
Максимально допустимый постоянный ток стока |Id|: 160 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 56 nC
Время нарастания (tr): 26 ns
Выходная емкость (Cd): 941 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0026 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMN2R5-40YLD
PSMN2R5-40YLD Datasheet (PDF)
psmn2r5-40yld.pdf
PSMN2R5-40YLDN-channel 40 V, 2.6 m, 160 A logic level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 packageusing advanced TrenchMOS Superjunction technology. This product has been designed andqualified for high performance power
psmn2r5-30yl.pdf
PSMN2R5-30YLN-channel 30 V 2.4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benef
psmn2r5-60pl.pdf
PSMN2R5-60PLN-channel 60 V, 2.6 m logic level MOSFET in SOT7827 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi
psmn2r5-30yl.pdf
PSMN2R5-30YLN-channel 30 V 2.4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benef
psmn2r5-60pl.pdf
isc N-Channel MOSFET Transistor PSMN2R5-60PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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