All MOSFET. PSMN2R5-40YLD Datasheet

 

PSMN2R5-40YLD MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN2R5-40YLD
   Marking Code: 2D5L40Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 941 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SOT669

 PSMN2R5-40YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN2R5-40YLD Datasheet (PDF)

 ..1. Size:304K  nxp
 psmn2r5-40yld.pdf

PSMN2R5-40YLD PSMN2R5-40YLD

PSMN2R5-40YLDN-channel 40 V, 2.6 m, 160 A logic level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 packageusing advanced TrenchMOS Superjunction technology. This product has been designed andqualified for high performance power

 6.1. Size:390K  philips
 psmn2r5-30yl.pdf

PSMN2R5-40YLD PSMN2R5-40YLD

PSMN2R5-30YLN-channel 30 V 2.4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benef

 6.2. Size:253K  nxp
 psmn2r5-60pl.pdf

PSMN2R5-40YLD PSMN2R5-40YLD

PSMN2R5-60PLN-channel 60 V, 2.6 m logic level MOSFET in SOT7827 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi

 6.3. Size:980K  nxp
 psmn2r5-30yl.pdf

PSMN2R5-40YLD PSMN2R5-40YLD

PSMN2R5-30YLN-channel 30 V 2.4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benef

 6.4. Size:261K  inchange semiconductor
 psmn2r5-60pl.pdf

PSMN2R5-40YLD PSMN2R5-40YLD

isc N-Channel MOSFET Transistor PSMN2R5-60PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BRCS080N04SC | IXTT30N50P | FDPF12N50T | FCMT250N65S3

 

 
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