PSMN2R5-40YLD Datasheet. Specs and Replacement

Type Designator: PSMN2R5-40YLD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 941 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: SOT669

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PSMN2R5-40YLD datasheet

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PSMN2R5-40YLD

PSMN2R5-40YLD N-channel 40 V, 2.6 m , 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power ... See More ⇒

 6.1. Size:390K  philips
 psmn2r5-30yl.pdf pdf_icon

PSMN2R5-40YLD

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef... See More ⇒

 6.2. Size:253K  nxp
 psmn2r5-60pl.pdf pdf_icon

PSMN2R5-40YLD

PSMN2R5-60PL N-channel 60 V, 2.6 m logic level MOSFET in SOT78 27 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi... See More ⇒

 6.3. Size:980K  nxp
 psmn2r5-30yl.pdf pdf_icon

PSMN2R5-40YLD

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef... See More ⇒

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Detailed specifications: PSMN1R7-40YLD, PSMN1R8-30MLH, PSMN1R9-40YSD, PSMN2R0-25MLD, PSMN2R0-25YLD, PSMN2R0-40YLD, PSMN2R0-60PSR, PSMN2R2-40YSD, EMB04N03H, PSMN2R8-40YSD, PSMN3R2-40YLD, PSMN3R3-40MLH, PSMN3R3-40MSH, PSMN3R5-25MLD, PSMN3R5-40YSD, PSMN3R9-100YSF, PSMN4R1-60YL

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