PSMN3R2-40YLD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN3R2-40YLD
Código: 3D2L40Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 115 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.05 V
Carga de la puerta (Qg): 41 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 704 pF
Resistencia entre drenaje y fuente RDS(on): 0.0033 Ohm
Paquete / Cubierta: SOT669
Búsqueda de reemplazo de MOSFET PSMN3R2-40YLD
PSMN3R2-40YLD Datasheet (PDF)
psmn3r2-40yld.pdf
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psmn3r2-30ylc.pdf
PSMN3R2-30YLCN-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
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