PSMN3R2-40YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN3R2-40YLD
Маркировка: 3D2L40Y
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 115 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.05 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 41 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 704 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0033 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMN3R2-40YLD
PSMN3R2-40YLD Datasheet (PDF)
psmn3r2-40yld.pdf
PSMN3R2-40YLDN-channel 40 V, 3.3 m, 120 A logic level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology26 August 2019 Product data sheet1. General description120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 packageusing advanced TrenchMOS Superjunction technology. This product has been designed andqualified for high performance power
psmn3r2-25ylc.pdf
PSMN3R2-25YLCN-channel 25 V 3.4 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn3r2-30ylc.pdf
PSMN3R2-30YLCN-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn3r2-30ylc.pdf
PSMN3R2-30YLCN-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
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