PSMN3R2-40YLD MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN3R2-40YLD
Marking Code: 3D2L40Y
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 704 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: SOT669
PSMN3R2-40YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN3R2-40YLD Datasheet (PDF)
psmn3r2-40yld.pdf
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psmn3r2-30ylc.pdf
PSMN3R2-30YLCN-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
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