PSMN5R6-60YL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN5R6-60YL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 167 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36.4 nS
Cossⓘ - Capacitancia de salida: 341 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Encapsulados: SOT669
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PSMN5R6-60YL datasheet
psmn5r6-60yl.pdf
PSMN5R6-60YL N-channel 60 V, 5.6 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and
psmn5r6-100ps.pdf
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 Rev. 03 2 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
psmn5r6-100bs.pdf
PSMN5R6-100BS N-channel 100 V 5.6 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
psmn5r6-100ps.pdf
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
Otros transistores... PSMN3R3-40MSH, PSMN3R5-25MLD, PSMN3R5-40YSD, PSMN3R9-100YSF, PSMN4R1-60YL, PSMN5R2-60YL, PSMN5R3-25MLD, PSMN5R4-25YLD, IRF840, PSMN6R0-25YLD, PSMN6R4-30MLD, PSMN6R5-30MLD, PSMN6R7-40MLD, PSMN6R7-40MSD, PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL
History: SSM3K59CTB | SSM40T03GH
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