PSMN5R6-60YL - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN5R6-60YL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 167 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 36.4 ns
Cossⓘ - Выходная емкость: 341 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMN5R6-60YL
PSMN5R6-60YL Datasheet (PDF)
psmn5r6-60yl.pdf
PSMN5R6-60YL N-channel 60 V, 5.6 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and
psmn5r6-100ps.pdf
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 Rev. 03 2 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
psmn5r6-100bs.pdf
PSMN5R6-100BS N-channel 100 V 5.6 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
psmn5r6-100ps.pdf
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
Другие MOSFET... PSMN3R3-40MSH , PSMN3R5-25MLD , PSMN3R5-40YSD , PSMN3R9-100YSF , PSMN4R1-60YL , PSMN5R2-60YL , PSMN5R3-25MLD , PSMN5R4-25YLD , IRF840 , PSMN6R0-25YLD , PSMN6R4-30MLD , PSMN6R5-30MLD , PSMN6R7-40MLD , PSMN6R7-40MSD , PSMN6R9-100YSF , PSMN7R5-60YL , PSMN8R0-80YL .
History: ZDX050N50 | PTP10HN10 | PTD7N65 | PTD4N60 | PTN3006 | STP4N80XI | ZVN3310ASTOB
History: ZDX050N50 | PTP10HN10 | PTD7N65 | PTD4N60 | PTN3006 | STP4N80XI | ZVN3310ASTOB
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