PSMN5R6-60YL MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN5R6-60YL
Marking Code: 5R6L60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 66.8 nC
trⓘ - Rise Time: 36.4 nS
Cossⓘ - Output Capacitance: 341 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: SOT669
PSMN5R6-60YL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN5R6-60YL Datasheet (PDF)
psmn5r6-60yl.pdf
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psmn5r6-100ps.pdf
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psmn5r6-100bs.pdf
isc N-Channel MOSFET Transistor PSMN5R6-100BSFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
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