PSMN6R0-25YLD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN6R0-25YLD  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 61 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.4 nS

Cossⓘ - Capacitancia de salida: 598 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00675 Ohm

Encapsulados: SOT669

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PSMN6R0-25YLD datasheet

 ..1. Size:721K  nxp
 psmn6r0-25yld.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-25YLD N-channel 25 V, 6.75 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF

 2.1. Size:910K  nxp
 psmn6r0-25ylb.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-25YLB N-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

 6.1. Size:383K  philips
 psmn6r0-30yl.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 6.2. Size:324K  nxp
 psmn6r0-30yld.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET

MOSTRAR MÁS

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