Справочник MOSFET. PSMN6R0-25YLD

 

PSMN6R0-25YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN6R0-25YLD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 61 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 7.4 ns
   Cossⓘ - Выходная емкость: 598 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00675 Ohm
   Тип корпуса: SOT669

 Аналог (замена) для PSMN6R0-25YLD

 

 

PSMN6R0-25YLD Datasheet (PDF)

 ..1. Size:721K  nxp
 psmn6r0-25yld.pdf

PSMN6R0-25YLD PSMN6R0-25YLD

PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

 2.1. Size:910K  nxp
 psmn6r0-25ylb.pdf

PSMN6R0-25YLD PSMN6R0-25YLD

PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 6.1. Size:383K  philips
 psmn6r0-30yl.pdf

PSMN6R0-25YLD PSMN6R0-25YLD

PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 6.2. Size:324K  nxp
 psmn6r0-30yld.pdf

PSMN6R0-25YLD PSMN6R0-25YLD

PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 6.3. Size:910K  nxp
 psmn6r0-30ylb.pdf

PSMN6R0-25YLD PSMN6R0-25YLD

PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

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History: DMP3105LVT

 

 
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