PSMN6R0-25YLD Specs and Replacement

Type Designator: PSMN6R0-25YLD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 598 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00675 Ohm

Package: SOT669

PSMN6R0-25YLD substitution

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PSMN6R0-25YLD datasheet

 ..1. Size:721K  nxp
 psmn6r0-25yld.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-25YLD N-channel 25 V, 6.75 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF... See More ⇒

 2.1. Size:910K  nxp
 psmn6r0-25ylb.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-25YLB N-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef... See More ⇒

 6.1. Size:383K  philips
 psmn6r0-30yl.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit... See More ⇒

 6.2. Size:324K  nxp
 psmn6r0-30yld.pdf pdf_icon

PSMN6R0-25YLD

PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒

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Detailed specifications: PSMN3R5-25MLD, PSMN3R5-40YSD, PSMN3R9-100YSF, PSMN4R1-60YL, PSMN5R2-60YL, PSMN5R3-25MLD, PSMN5R4-25YLD, PSMN5R6-60YL, 20N60, PSMN6R4-30MLD, PSMN6R5-30MLD, PSMN6R7-40MLD, PSMN6R7-40MSD, PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF

Keywords - PSMN6R0-25YLD MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.