PSMN8R5-100ESF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN8R5-100ESF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 183 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 97 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26.8 nS

Cossⓘ - Capacitancia de salida: 551 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm

Encapsulados: I2PAK

 Búsqueda de reemplazo de PSMN8R5-100ESF MOSFET

- Selecciónⓘ de transistores por parámetros

 

PSMN8R5-100ESF datasheet

 ..1. Size:250K  nxp
 psmn8r5-100esf.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 1.1. Size:220K  nxp
 psmn8r5-100es.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100ES N-channel 100 V 8.5 m standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

 3.1. Size:228K  nxp
 psmn8r5-100xs.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi

 3.2. Size:258K  nxp
 psmn8r5-100psf.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100PSF NextPower 100 V, 8.7 m N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

MOSTRAR MÁS

Otros transistores... PSMN6R0-25YLD, PSMN6R4-30MLD, PSMN6R5-30MLD, PSMN6R7-40MLD, PSMN6R7-40MSD, PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL, IRLZ44N, PSMN8R5-100PSF, PSMN8R5-40MSD, PSMN8R7-100YSF, PSMNR60-25YLH, PSMNR70-30YLH, PSMNR70-40SSH, PSMNR90-40SSH, PSMNR90-40YLH