PSMN8R5-100ESF MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN8R5-100ESF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 97 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44.5 nC
trⓘ - Rise Time: 26.8 nS
Cossⓘ - Output Capacitance: 551 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: I2PAK
PSMN8R5-100ESF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN8R5-100ESF Datasheet (PDF)
psmn8r5-100esf.pdf
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