PSMN8R5-100ESF. Аналоги и основные параметры

Наименование производителя: PSMN8R5-100ESF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 183 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 97 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 4 V

Qg ⓘ - Общий заряд затвора: 44.5 nC

tr ⓘ - Время нарастания: 26.8 ns

Cossⓘ - Выходная емкость: 551 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm

Тип корпуса: I2PAK

Аналог (замена) для PSMN8R5-100ESF

- подборⓘ MOSFET транзистора по параметрам

 

PSMN8R5-100ESF даташит

 ..1. Size:250K  nxp
 psmn8r5-100esf.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 1.1. Size:220K  nxp
 psmn8r5-100es.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100ES N-channel 100 V 8.5 m standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

 3.1. Size:228K  nxp
 psmn8r5-100xs.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi

 3.2. Size:258K  nxp
 psmn8r5-100psf.pdf pdf_icon

PSMN8R5-100ESF

PSMN8R5-100PSF NextPower 100 V, 8.7 m N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

ПОКАЗАТЬ ЕЩЁ

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