Справочник MOSFET. PSMN8R5-100ESF

 

PSMN8R5-100ESF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN8R5-100ESF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 183 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 97 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 26.8 ns
   Cossⓘ - Выходная емкость: 551 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm
   Тип корпуса: I2PAK
     - подбор MOSFET транзистора по параметрам

 

PSMN8R5-100ESF Datasheet (PDF)

 ..1. Size:250K  nxp
psmn8r5-100esf.pdfpdf_icon

PSMN8R5-100ESF

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 1.1. Size:220K  nxp
psmn8r5-100es.pdfpdf_icon

PSMN8R5-100ESF

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

 3.1. Size:228K  nxp
psmn8r5-100xs.pdfpdf_icon

PSMN8R5-100ESF

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 3.2. Size:258K  nxp
psmn8r5-100psf.pdfpdf_icon

PSMN8R5-100ESF

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

 

 
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