PSMN8R5-100PSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN8R5-100PSF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 183 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 98 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26.8 nS
Cossⓘ - Capacitancia de salida: 551 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de PSMN8R5-100PSF MOSFET
PSMN8R5-100PSF Datasheet (PDF)
psmn8r5-100psf.pdf

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100ps.pdf

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co
psmn8r5-100esf.pdf

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100xs.pdf

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi
Otros transistores... PSMN6R4-30MLD , PSMN6R5-30MLD , PSMN6R7-40MLD , PSMN6R7-40MSD , PSMN6R9-100YSF , PSMN7R5-60YL , PSMN8R0-80YL , PSMN8R5-100ESF , IRF640N , PSMN8R5-40MSD , PSMN8R7-100YSF , PSMNR60-25YLH , PSMNR70-30YLH , PSMNR70-40SSH , PSMNR90-40SSH , PSMNR90-40YLH , FDMS007N08LC .
History: AD7N60S | IXFT86N30T | QM03N65F | IRFS723 | ME70N03S-G | DH400P06F | IPB180N08S4-02
History: AD7N60S | IXFT86N30T | QM03N65F | IRFS723 | ME70N03S-G | DH400P06F | IPB180N08S4-02



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