PSMN8R5-100PSF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN8R5-100PSF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 183 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 98 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 26.8 ns
Cossⓘ - Выходная емкость: 551 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для PSMN8R5-100PSF
PSMN8R5-100PSF Datasheet (PDF)
psmn8r5-100psf.pdf

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100ps.pdf

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co
psmn8r5-100esf.pdf

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100xs.pdf

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi
Другие MOSFET... PSMN6R4-30MLD , PSMN6R5-30MLD , PSMN6R7-40MLD , PSMN6R7-40MSD , PSMN6R9-100YSF , PSMN7R5-60YL , PSMN8R0-80YL , PSMN8R5-100ESF , IRF640N , PSMN8R5-40MSD , PSMN8R7-100YSF , PSMNR60-25YLH , PSMNR70-30YLH , PSMNR70-40SSH , PSMNR90-40SSH , PSMNR90-40YLH , FDMS007N08LC .
History: CJ3139KDW | IXTQ96N15P
History: CJ3139KDW | IXTQ96N15P



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