Справочник MOSFET. PSMN8R5-100PSF

 

PSMN8R5-100PSF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN8R5-100PSF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 183 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 98 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 26.8 ns
   Cossⓘ - Выходная емкость: 551 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
   Тип корпуса: TO-220AB
 

 Аналог (замена) для PSMN8R5-100PSF

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN8R5-100PSF Datasheet (PDF)

 ..1. Size:258K  nxp
psmn8r5-100psf.pdfpdf_icon

PSMN8R5-100PSF

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 1.1. Size:250K  nxp
psmn8r5-100ps.pdfpdf_icon

PSMN8R5-100PSF

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 3.1. Size:250K  nxp
psmn8r5-100esf.pdfpdf_icon

PSMN8R5-100PSF

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 3.2. Size:228K  nxp
psmn8r5-100xs.pdfpdf_icon

PSMN8R5-100PSF

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

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History: CJ3139KDW | IXTQ96N15P

 

 
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