All MOSFET. PSMN8R5-100PSF Datasheet

 

PSMN8R5-100PSF Datasheet and Replacement


   Type Designator: PSMN8R5-100PSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 183 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26.8 nS
   Cossⓘ - Output Capacitance: 551 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: TO-220AB
 

 PSMN8R5-100PSF substitution

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PSMN8R5-100PSF Datasheet (PDF)

 ..1. Size:258K  nxp
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PSMN8R5-100PSF

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 1.1. Size:250K  nxp
psmn8r5-100ps.pdf pdf_icon

PSMN8R5-100PSF

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 3.1. Size:250K  nxp
psmn8r5-100esf.pdf pdf_icon

PSMN8R5-100PSF

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 3.2. Size:228K  nxp
psmn8r5-100xs.pdf pdf_icon

PSMN8R5-100PSF

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

Datasheet: PSMN6R4-30MLD , PSMN6R5-30MLD , PSMN6R7-40MLD , PSMN6R7-40MSD , PSMN6R9-100YSF , PSMN7R5-60YL , PSMN8R0-80YL , PSMN8R5-100ESF , IRF640N , PSMN8R5-40MSD , PSMN8R7-100YSF , PSMNR60-25YLH , PSMNR70-30YLH , PSMNR70-40SSH , PSMNR90-40SSH , PSMNR90-40YLH , FDMS007N08LC .

History: AP4P016I | AOB66613L | NCE8205t | SPA04N60C3 | 7N65KL-TA3-T | BSC252N10NSF | IRF7665S2TRPBF

Keywords - PSMN8R5-100PSF MOSFET datasheet

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