All MOSFET. PSMN8R5-100PSF Datasheet

 

PSMN8R5-100PSF MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN8R5-100PSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 183 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 98 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 44.5 nC
   Rise Time (tr): 26.8 nS
   Drain-Source Capacitance (Cd): 551 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0087 Ohm
   Package: TO-220AB

 PSMN8R5-100PSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN8R5-100PSF Datasheet (PDF)

 ..1. Size:258K  nxp
psmn8r5-100psf.pdf

PSMN8R5-100PSF
PSMN8R5-100PSF

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 1.1. Size:250K  nxp
psmn8r5-100ps.pdf

PSMN8R5-100PSF
PSMN8R5-100PSF

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 3.1. Size:250K  nxp
psmn8r5-100esf.pdf

PSMN8R5-100PSF
PSMN8R5-100PSF

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 3.2. Size:228K  nxp
psmn8r5-100xs.pdf

PSMN8R5-100PSF
PSMN8R5-100PSF

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 3.3. Size:220K  nxp
psmn8r5-100es.pdf

PSMN8R5-100PSF
PSMN8R5-100PSF

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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