PSMN8R5-100PSF MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN8R5-100PSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 98 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44.5 nC
trⓘ - Rise Time: 26.8 nS
Cossⓘ - Output Capacitance: 551 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: TO-220AB
PSMN8R5-100PSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN8R5-100PSF Datasheet (PDF)
psmn8r5-100psf.pdf
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psmn8r5-100esf.pdf
PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100xs.pdf
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psmn8r5-100es.pdf
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