FDMT80040DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMT80040DC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 420 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 5540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00056 Ohm
   Paquete / Cubierta: DUALCOOL88

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FDMT80040DC Datasheet (PDF)

..1. Size:507K onsemi
fdmt80040dc.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:480K fairchild semi
fdmt800152dc.pdf

March 2015FDMT800152DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 72 A, 9.0 mFeatures General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo

7.2. Size:364K fairchild semi
fdmt800150dc.pdf

February 2015FDMT800150DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 99 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in

7.3. Size:366K fairchild semi
fdmt800100dc.pdf

February 2015FDMT800100DCN-Channel Dual CoolTM PowerTrench MOSFET100 V, 162 A, 2.95 mFeatures General Description Max rDS(on) = 2.95 m at VGS = 10 V, ID = 24 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.46 m at VGS = 6 V, ID = 19 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements

7.4. Size:510K onsemi
fdmt800152dc.pdf