FDMT80040DC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMT80040DC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 420 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 5540 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00056 Ohm

Encapsulados: DUALCOOL88

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FDMT80040DC datasheet

 ..1. Size:507K  onsemi
 fdmt80040dc.pdf pdf_icon

FDMT80040DC

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:480K  fairchild semi
 fdmt800152dc.pdf pdf_icon

FDMT80040DC

March 2015 FDMT800152DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 72 A, 9.0 m Features General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo

 7.2. Size:364K  fairchild semi
 fdmt800150dc.pdf pdf_icon

FDMT80040DC

February 2015 FDMT800150DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 99 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in

 7.3. Size:366K  fairchild semi
 fdmt800100dc.pdf pdf_icon

FDMT80040DC

February 2015 FDMT800100DC N-Channel Dual CoolTM PowerTrench MOSFET 100 V, 162 A, 2.95 m Features General Description Max rDS(on) = 2.95 m at VGS = 10 V, ID = 24 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.46 m at VGS = 6 V, ID = 19 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements

MOSTRAR MÁS

Otros transistores... FDMS86181, FDMS86182, FDMS86183, FDMS86368-F085, FDMS86369-F085, FDMS86381-F085, FDMS86581, FDMS8D8N15C, IRLB4132, FDN028N20, FDN304P2, FDN5632N-F085, FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, FDPF7N50U_G