Справочник MOSFET. FDMT80040DC

 

FDMT80040DC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMT80040DC
   Маркировка: 80040DC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 420 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 241 nC
   trⓘ - Время нарастания: 62 ns
   Cossⓘ - Выходная емкость: 5540 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00056 Ohm
   Тип корпуса: DUALCOOL88
     - подбор MOSFET транзистора по параметрам

 

FDMT80040DC Datasheet (PDF)

 ..1. Size:507K  onsemi
fdmt80040dc.pdfpdf_icon

FDMT80040DC

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:480K  fairchild semi
fdmt800152dc.pdfpdf_icon

FDMT80040DC

March 2015FDMT800152DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 72 A, 9.0 mFeatures General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo

 7.2. Size:364K  fairchild semi
fdmt800150dc.pdfpdf_icon

FDMT80040DC

February 2015FDMT800150DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 99 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in

 7.3. Size:366K  fairchild semi
fdmt800100dc.pdfpdf_icon

FDMT80040DC

February 2015FDMT800100DCN-Channel Dual CoolTM PowerTrench MOSFET100 V, 162 A, 2.95 mFeatures General Description Max rDS(on) = 2.95 m at VGS = 10 V, ID = 24 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.46 m at VGS = 6 V, ID = 19 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements

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History: SI9435DY-T1 | SKI04024

 

 
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