All MOSFET. FDMT80040DC Datasheet

 

FDMT80040DC Datasheet and Replacement


   Type Designator: FDMT80040DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 420 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 5540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00056 Ohm
   Package: DUALCOOL88
 

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FDMT80040DC Datasheet (PDF)

 ..1. Size:507K  onsemi
fdmt80040dc.pdf pdf_icon

FDMT80040DC

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:480K  fairchild semi
fdmt800152dc.pdf pdf_icon

FDMT80040DC

March 2015FDMT800152DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 72 A, 9.0 mFeatures General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo

 7.2. Size:364K  fairchild semi
fdmt800150dc.pdf pdf_icon

FDMT80040DC

February 2015FDMT800150DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 99 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in

 7.3. Size:366K  fairchild semi
fdmt800100dc.pdf pdf_icon

FDMT80040DC

February 2015FDMT800100DCN-Channel Dual CoolTM PowerTrench MOSFET100 V, 162 A, 2.95 mFeatures General Description Max rDS(on) = 2.95 m at VGS = 10 V, ID = 24 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.46 m at VGS = 6 V, ID = 19 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements

Datasheet: FDMS86181 , FDMS86182 , FDMS86183 , FDMS86368-F085 , FDMS86369-F085 , FDMS86381-F085 , FDMS86581 , FDMS8D8N15C , 5N60 , FDN028N20 , FDN304P2 , FDN5632N-F085 , FDP030N06B_F102 , FDP2710-F085 , FDPC3D5N025X9D , FDPC8014AS , FDPF7N50U_G .

History: NCEP02525K

Keywords - FDMT80040DC MOSFET datasheet

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