FDMT80040DC MOSFET Datasheet: N-Ch, 40V, 420A. Full specification with pinout and replacement list

FDMT80040DC Specs and Replacement

Type Designator: FDMT80040DC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 420 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 5540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00056 Ohm

Package: DUALCOOL88

FDMT80040DC substitution

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FDMT80040DC datasheet

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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March 2015 FDMT800152DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 72 A, 9.0 m Features General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo... See More ⇒

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February 2015 FDMT800150DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 99 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in ... See More ⇒

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February 2015 FDMT800100DC N-Channel Dual CoolTM PowerTrench MOSFET 100 V, 162 A, 2.95 m Features General Description Max rDS(on) = 2.95 m at VGS = 10 V, ID = 24 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.46 m at VGS = 6 V, ID = 19 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements... See More ⇒