FDPF7N50U_G Todos los transistores

 

FDPF7N50U_G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF7N50U_G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-220F
 

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FDPF7N50U_G Datasheet (PDF)

 ..1. Size:1295K  onsemi
 fdpf7n50u fdpf7n50u g.pdf pdf_icon

FDPF7N50U_G

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

 5.1. Size:1264K  fairchild semi
 fdpf7n50u.pdf pdf_icon

FDPF7N50U_G

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

 6.1. Size:1019K  fairchild semi
 fdp7n50 fdpf7n50.pdf pdf_icon

FDPF7N50U_G

April 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

 6.2. Size:375K  fairchild semi
 fdpf7n50 fdpf7n50f.pdf pdf_icon

FDPF7N50U_G

March 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

MOSTRAR MÁS

Otros transistores... FDMT80040DC , FDN028N20 , FDN304P2 , FDN5632N-F085 , FDP030N06B_F102 , FDP2710-F085 , FDPC3D5N025X9D , FDPC8014AS , TK10A60D , FDS6898AZ-F085 , FDS8449-F085 , FDS86267P , FDS8949-F085 , FDS8958A-F085 , FDS8984-F085 , FDU3N50NZTU , FDU5N50NZTU .

History: FDS6688AS

 

 
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